diffusion length中文什么意思

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用"diffusion length"造句

擴散長度
擴散距離

diffusion: n. 1.散布，發散。 2.傳播，普及。 3.冗長。 4 ...
length: n. 1.長，長度，長短。 2.(時間的)長短，期間。 ...
cavity diffusion length: 共振腔擴散長度
electron diffusion length: 電子擴散長度
fast neutron diffusion length: 快中子擴散長度

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例句與用法

The impact of the effective resist diffusion length to the exposure latitude and mef ( mask error factor ) for the 0 . 13 m photolithography and beyond is presented
展示了在0 . 13 m及以下工藝中等效擴散對能量裕度和掩模版誤差因子的影響的研究結果。
How to use the measured effective diffusion length and scanner illumination condition to demonstrate photolithography line width uniformity is introduced
摘要介紹了如何通過測量得出的等效擴散長度和光刻機的照明條件來對任何光刻工藝的線寬均勻性進行評估。
Generally the minority carriers accumulated by the cell are generated either directly from the p - n junction or the distance between the generated minority carriers and the junction is less than the diffusion length of the minority carriers
通常的太陽電池收集的少數載流子要么是產生于p - n結,要么是少數載流子距離結的距離必須小于其擴散長度。
Based on the energy band characteristics of ordinary negative electron affinity emitter gaas , the design of lengthening the diffusion lengths of negative electron affinity emitter gaas was presented , and the special negative electron affinity emitter gaas was designed
摘要根據通常負電子親和勢二次電子發射材料砷化鎵的能級特點，提出延長負電子親和勢二次電子發射材料砷化鎵的逸出深度的理論設計，設計出了特殊的負電子親和勢二次電子發射材料砷化鎵。
The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy . on the basis of the new concept suggested in this paper , the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following . the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h
本文根據柱狀結構存在各向異性的特點，并根據半導體物理知識，推出光導層光生載流子橫向最大擴散長度(該擴散長度與液晶光閥光導層分辨率直接相關)與薄膜橫向和縱向電導率關系的表達式為：由于a - si ： h在al金屬的誘導作用下在不高于250的溫度下即開始晶化，本文對用金屬al誘導非晶硅晶化制備的nc - si a - si ： h薄膜進行研究。